2SB731 データシートの表示（PDF） - Inchange Semiconductor

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2SB731

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=-1.0A; IB=-50mA

VBEsat Base-emitter saturation voltage

IC=-1.0A; IB=-50mA

ICBO

Collector cut-off current

VCB=-50V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE-1

DC current gain

IC=-0.1A ; VCE=-2V

hFE-2

DC current gain

IC=-1A ; VCE=-1V

fT

Transition frequency

IC=-10mA ; VCE=-2V

COB

Collector output capacitance

IE=0; f=1MHz ; VCB=-10V

‹ hFE-1 Classifications

L

K

F

E

135-270 200-400 300-480 360-600

Product Specification

2SB731

MIN TYP. MAX UNIT

-0.5 -0.6

V

-1.0 -1.2

V

-0.1 μA

-0.1 μA

135

600

40

75

MHz

25

pF

2

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