JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-0.1A; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A
VBE
Base-emitter on voltage
IC=-5A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-150V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-1A ; VCE=-5V
fT
Transition frequency
IC=-1A ; VCE=-10V
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
hFE classifications
R
O
55-110
80-160
Product Specification
2SB755
MIN TYP. MAX UNIT
-150
V
-5
V
-2.0
V
-1.5
V
-50 μA
-50 μA
55
160
20
MHz
450
pF
2