2SB0930A データシートの表示（PDF） - Panasonic Corporation

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2SB0930A

Silicon PNP epitaxial planar type

Panasonic Corporation 

Power Transistors

2SB0930 (2SB930), 2SB0930A (2SB930A)

Silicon PNP epitaxial planar type

For power amplification

Complementary to 2SD1253, 2SD1253A

■ Features

• High forward current transfer ratio hFE which has satisfactory linearity

• Low collector-emitter saturation voltage VCE(sat)

• N type package enabling direct soldering of the radiating fin to the

printed circuit board, etc. of small electronic equipment.

■ Absolute Maximum Ratings TC = 25°C

Parameter

Symbol Rating

Unit

Collector-base voltage 2SB0930 VCBO

−60

V

(Emitter open)

2SB0930A

−80

Collector-emitter voltage 2SB0930 VCEO

−60

V

(Base open)

2SB0930A

−80

Emitter-base voltage (Collector open) VEBO

−5

V

Collector current

IC

−4

A

Peak collector current

ICP

−8

A

Collector power dissipation

PC

40

W

Ta = 25°C

1.3

Junction temperature

Tj

150

°C

Storage temperature

Tstg −55 to +150 °C

8.5±0.2

6.0±0.2

Unit: mm

3.4±0.3

1.0±0.1

0 to 0.4

0.8±0.1

2.54±0.3

1.4±0.1

5.08±0.5

R = 0.5

R = 0.5

1.0±0.1

0.4±0.1

123

(8.5)

(6.0) 1.3

(6.5)

1 : Base

2 : Collector

3 : Emitter

N-G1 Package

Note) Self-supported type package is also prepared.

■ Electrical Characteristics TC = 25°C ± 3°C

Parameter

Symbol

Conditions

Min Typ Max Unit

Collector-emitter voltage 2SB0930 VCEO IC = −30 mA, IB = 0

−60

V

(Base open)

2SB0930A

−80

Collector-emitter cutoff 2SB0930 ICES VCE = −60 V, VBE = 0

−400 µA

current (E-B short)

2SB0930A

VCE = −80 V, VBE = 0

−400

Collector-emitter cutoff 2SB0930 ICEO VCE = −30 V, IB = 0

−700 µA

current (Base open)

2SB0930A

VCE = −60 V, IB = 0

−700

Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0

−1

mA

Forward current transfer ratio

hFE1 * VCE = −4 V, IC = −1 A

70

250



hFE2 VCE = −4 V, IC = −3 A

15

Base-emitter voltage

VBE VCE = −4 V, IC = −3 A

−2.0

V

Collector-emitter saturation voltage

VCE(sat) IC = −4 A, IB = −0.4 A

−1.5

V

Transition frequency

fT

VCE = −10 V, IC = − 0.5 A, f = 10 MHz

20

MHz

Turn-on time

ton

IC = −4 A,

0.2

µs

Storage time

tstg

IB1 = − 0.4 A, IB2 = 0.4 A

0.5

µs

Fall time

tf

VCC = −50 V

0.2

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

Q

P

hFE1

70 to 150 120 to 250

Note) The part number in the parenthesis shows conventional part number.

Publication date: April 2003

SJD00012BED

1

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