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2SB968 データシートの表示(PDF) - Panasonic Corporation

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2SB968
Panasonic
Panasonic Corporation Panasonic
2SB968 Datasheet PDF : 4 Pages
1 2 3 4
Power Transistors
2SB0968 (2SB968)
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD1295
Features
Possible to solder radiation fin directly to printed circuit board
High collector-emitter voltage (Base open) VCEO
Large collector power dissipation PC
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
50
V
Collector-emitter voltage (Base open) VCEO
40
V
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
1.5
A
Peak collector current
ICP
3
A
Collector power dissipation (TC = 25°C) PC
10
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg 55 to +150 °C
6.5±0.1
5.3±0.1
4.35±0.1
Unit: mm
2.3±0.1
0.5±0.1
1.0±0.1
2
0.1±0.05
0.5±0.1
1
3 0.75±0.1
2.3±0.1
4.6±0.1
(5.3)
(4.35)
(3.0)
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-63
U-G1 Package
Note) Self-supported type package is also prepared.
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emitter open) VCBO IC = −1 mA, IE = 0
50
Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0
40
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0
Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0
Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0
Forward current transfer ratio
hFE1 * VCE = −5 V, IC = −1 A
80
hFE2 VCE = −5 V, IC = −1 mA
10
Collector-emitter saturation voltage
VCE(sat) IC = −1.5 A, IB = − 0.15 A
Base-emitter saturation voltage
VBE(sat) IC = −2 A, IB = − 0.2 A
Transition frequency
fT
VCE = −5 V, IC = − 0.5 A, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −20 V, IE = 0, f = 1 MHz
Typ Max
1
100
10
220
1
1.5
150
45
Unit
V
V
µA
µA
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
hFE1
Q
80 to 160
R
120 to 220
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2003
SJD00035AED
1

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