2SC1623W データシートの表示（PDF） - Galaxy Semi-Conductor
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2SC1623W Datasheet PDF : 4 Pages
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BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
2SC1623W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
60
V
Collector-emitter breakdown
voltage
V(BR)CEO
IC=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
6
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1 μA
Emitter cut-off current
DC current gain
IEBO
VEB=5V,IC=0
hFE
VCE=6V,IC=2mA
0.1 μA
90 200 600
Collector-emitter saturation voltage VCE(sat)
IC=100mA, IB= 10mA
0.15 0.3 V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB= 10mA
0.86 1.0 V
Transition frequency
Output capacitance
fT
VCE=6V, IE= -10mA
Cob
VCE=6V, IE= 0mA
f=1.0MHz
250
MHz
3.0
pF
CLASSIFICANTION OF hFE
Marking
hFE
L4
90-180
L5
135-270
L6
200-400
L7
300-600
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF035
Rev.A
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