2SC1227 データシートの表示（PDF） - Inchange Semiconductor
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2SC1227 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=0.1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=0.1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
VBEsat Base-emitter saturation voltage
IC=5A; IB=0.5A
ICBO
Collector cut-off current
VCB=300V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=5A ; VCE=5V
Product Specification
2SC1227
MIN TYP. MAX UNIT
200
V
300
V
7
V
1.0
V
1.5
V
20
μA
20
μA
50
2
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