2SC1309 データシートの表示（PDF） - Inchange Semiconductor
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2SC1309 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0
V(BR)EBO Emitter-base breakdown votage
IE=1.0mA; IC=0
VCEsat Collector-emitter saturation voltage IC=5 A;IB=1.2 A
VBEsat Base-emitter saturation voltage
IC=5 A;IB=1.2 A
ICBO
Collector cut-off current
VCB=1200V;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=10V
Product Specification
2SC1309
MIN TYP. MAX UNIT
500
V
5
V
10
V
2
V
1.0 mA
1.0 mA
10
2
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