C1449 データシートの表示（PDF） - Inchange Semiconductor

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C1449

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=100μA;IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=100μA; IC=0

VCEsat Collector-emitter saturation voltage IC=500mA ;IB=50m A

VBEsat Base-emitter saturation voltage

IC=500mA ;IB=50m A

hFE

DC current gain

IC=300mA ; VCE=2V

ICBO

Collector cut-off current

VCB=35V; IE=0

IEBO

Emitter cut-off current

VEB=4V; IC=0

COB

Output capacitance

IE=0; VCB=10V;f=1MHz

fT

Transition frequency

IC=100mA ; VCE=5V

Product Specification

2SC1449

MIN TYP. MAX UNIT

40

V

35

V

5

V

0.7

V

1.5

V

40

250

0.5

μA

0.5

μA

20

pF

55

MHz

2

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