2SC2023 データシートの表示（PDF） - Inchange Semiconductor
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2SC2023 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A
ICBO
Collector cut-off current
VCB=300V ;IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=0.5 A ; VCE=4V
fT
Transition frequency
IC=0.2A ; VCE=12V
Cob
Collector output capacitance
f=1MHz ; VCB=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1A, IB1=0.1A
IB2=-0.2A; VCC=100V
RL=100Ω
Product Specification
2SC2023
MIN TYP. MAX UNIT
300
V
1.0
V
1.0
mA
1.0
mA
30
10
MHz
75
pF
0.30
μs
4.00
μs
1.00
μs
2
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