2SC2260 データシートの表示（PDF） - Inchange Semiconductor
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2SC2260 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2260
DESCRIPTION
·High Power Dissipation-
: PC= 80W(Max.)@TC=25℃
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
·Complement to Type 2SA980
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
160
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature
3
A
80
W
150
℃
-65~150 ℃
isc Website：www.iscsemi.cn
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