2SC2260 データシートの表示（PDF） - Inchange Semiconductor
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2SC2260 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2260
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 3A; VCE= 4V
fT
Current-Gain—Bandwidth Product
IE= -0.5A; VCE= 12V
MIN TYP. MAX UNIT
100
V
1.5
V
1.0 mA
1.0 mA
30
15
MHz
isc Website：www.iscsemi.cn
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