2SC1942 データシートの表示（PDF） - Quanzhou Jinmei Electronic

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2SC1942

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A

VBEsat Base-emitter saturation voltage

IC=2.5A; IB=0.8A

ICBO

Collector cut-off current

VCB=600V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=1 A ; VCE=5V

Product Specification

2SC1942

MIN TYP. MAX UNIT

800

V

6

V

5.0

V

1.5

V

10

μA

10

μA

8

40

2

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