2SC2636 データシートの表示（PDF） - Panasonic Corporation
部品番号
コンポーネント説明
メーカー
2SC2636 Datasheet PDF : 4 Pages
| |||
Transistors
2SC2636
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation
s Features
q High transition frequency fT.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage VCEO
20
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation PC
400
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
(1.5)
6.9±0.1
(1.5)
R 0.7
R 0.9
(0.85)
0.55±0.1
3
2
1
(2.5) (2.5)
1:Base
2:Collector
3:Emitter
Unit: mm
2.5±0.1
(1.0)
0.45±0.05
M-A1 Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to base voltage
VCBO
IC = 100µA, IE = 0
30
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
3
V
Forward current transfer ratio
hFE
VCB = 10V, IE = –2mA
25
Base to emitter voltage
Transition frequency
VBE
VCB = 10V, IE = –2mA
720
mV
fT*
VCB = 10V, IE = –15mA, f = 200MHz 600 1200 1600 MHz
Power gain
PG
VCB = 10V, IE = –1mA, f = 100MHz
20
dB
Common base reverse transfer capacitance Crb
VCB = 6V, IE = 0, f = 1MHz
0.8
pF
Common emitter reverse transfer capacitance Cre
VCE = 10V, IC = 1mA, f = 10.7MHz
1.5
pF
Base time constant
rbb' · CC
VCB = 10V, IE = –10mA, f = 31.9MHz
25
ps
*fT Rank classification
Rank
T
S
fT
600 ~ 1300 900 ~ 1600
Publication date: August 2002
SJC00120AED
1
Share Link: 