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2SC2655-Y(F,M) データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
メーカー
2SC2655-Y(F,M)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Toshiba
2SC2655-Y(F,M) Datasheet PDF : 5 Pages
1
2
3
4
5
2.4
25
20
2.0
18
I
C
– V
CE
Common emitter
Ta = 25°C
15
12
1.6
10
1.2
8
6
0.8
4
0.4
IB = 2 mA
0
0
0
2
4
6
8
10
12
14
Collector-emitter voltage V
CE
(V)
V
CE
– I
C
1.0
0.8
0.6
IB = 5 mA
10
0.4
20
30
40
0.2
Common emitter
Ta = 100°C
0
0
0.4
0.8
1.2
1.6
2.0
2.4
Collector current I
C
(A)
2SC2655
V
CE
– I
C
1.0
0.8
0.6
IB = 5 mA
10
0.4
20
30
40
0.2
Common emitter
Ta = 25°C
0
0
0.4
0.8
1.2
1.6
2.0
2.4
Collector current I
C
(A)
1.0
IB = 5 mA
0.8
V
CE
– I
C
0.6
10
20
30
0.4
40
50
0.2
Common emitter
Ta =
−
55°C
0
0
0.4
0.8
1.2
1.6
2.0
2.4
Collector current I
C
(A)
1000
500
300
100
50
30
h
FE
– I
C
Common emitter
VCE = 2 V
Ta = 100°C
25
−
55
10
0.01
0.03
0.1
0.3
1
Collector current I
C
(A)
V
CE (sat)
– I
C
1
Common emitter
0.5
IC/IB = 20
0.3
0.1
0.05
0.02
0.01
Ta = 100°C
25
−
55
0.03
0.1
0.3
1
Collector current I
C
(A)
3
2006-11-09
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