2SC2565 データシートの表示（PDF） - Inchange Semiconductor
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2SC2565 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2565
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; IB=0
160
V
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
5
V
VCEsat Collector-emitter saturation voltage IC=5 A; IB=0.5 A
2.0
V
VBE
Base-emitter on voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=5A ; VCE=5V
VCB=160V; IE=0
VEB=5V; IC=0
2.0
V
50
μA
50
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
55
240
hFE-2
DC current gain
IC=5A ; VCE=5V
40
固IN电C半H导AN体GE SEMICONDUCTOR fT
Transition frequency
COB
Output capacitance
hFE-1 classifications
R
O
Y
IC=1A ; VCE=10V
IE=0; VCB=10V;f=1MHz
80
MHz
200
pF
55-110 80-160 120-240
2
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