2SC2460 データシートの表示（PDF） - Inchange Semiconductor
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2SC2460 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=8A; IB=0.8A
VBE
Base-emitter on voltage
IC=6A ; VCE=5V
ICBO
Collector cut-off current
VCB=140V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=-5V
fT
Transition frequency
IC=1A ; VCE=10V
Product Specification
2SC2460
MIN TYP. MAX UNIT
140
V
140
V
5
V
2.5
V
1.5
V
10
μA
10
μA
55
240
35
70
MHz
2
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