2SC2497A データシートの表示（PDF） - Inchange Semiconductor
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2SC2497A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2497 2SC2497A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2SC2497
50
V(BR)CEO
Collector-emitter
breakdown voltage
IC=2mA ; IB=0
V
2SC2497A
60
V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0
70
V
VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.15A
1.0
V
VBEsat Base-emitter saturation voltage
IC=1.5A ;IB=0.15A
1.5
V
ICEO
Collector cut-off current
VCE=10V; IB=0
100
μA
ICBO
Collector cut-off current
VCB=20V; IE=0
1
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE
DC current gain
固IN电C半H导AN体GE SEMICONDUCTOR COB
Output capacitance
fT
Transition frequency
hFE Classifications
R
S
IC=1A ; VCE=5V
80
220
IE=0 ; VCB=20V,f=1MHz
35
pF
IE=0.5A ; VCB=5V,f=200MHz
150
MHz
80-160
120-220
2
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