Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2615
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0
400
V
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
7
V
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A
1.0
V
VBEsat Base-emitter saturation voltage
IC=4A ;IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=400V; IE=0
0.1 mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1 mA
hFE-1
DC current gain
IC=4A ; VCE=5V
15
固IN电C半H导AN体GE SEMICONDUCTOR hFE-2
DC current gain
IC=8A ; VCE=5V
7
2