TC3400VPA データシートの表示（PDF） - Microchip Technology

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TC3400VPA

+1.8V, Low Power, 16-Bit Sigma-Delta A/D Converter

Microchip Technology 

TC3400

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

Supply Voltage ..................................................... 6.0V

Input Voltage (All Other Pins):

............................... (GND – 0.3V) to (VDD + 0.3V)

Operating Temperature Range ................. 0°C to 85°C

Storage Temperature ........................ -65°C to +150°C

*Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

TC3400 DC ELECTRICAL SPECIFICATIONS

Electrical Characteristics: TA = 25°C and VDD = 2.7V, unless otherwise specified. Boldface type specifications apply for

temperatures of 0°C to 85°C. VREF = 1.25V, Internal Clock Frequency = 520kHz.

Symbol

Parameter

Min

Typ

Max

Unit

Test Conditions

Power Supply

VDD

Supply Voltage

1.8

IDD

Supply Current, During Data Conversion

—

IDDSLEEP Supply Current, Sleep Mode

—

—

Accuracy (Differential Inputs)

RES

Resolution

—

INL

Integral Non-Linearity

—

VOS

Offset Error

—

VNOISE

Referred to input

—

CMR

Common Mode Rejection

—

FSE

Full Scale Error

—

PSRR

Power Supply Rejection Ratio

—

IN+, IN-

VIN±

Differential Input Voltage

—

Absolute Voltage Range on IN+, IN-

—

Input Bias Current

—

CIN

Input Sampling Capacitance

—

RIN

Differential Input Resistance

—

REFIN, REFOUT

VREF

IREF

VREFOUT

REFSINK

REFSRC

Note 1:

2:

3:

REFIN Voltage Range

0

REFIN Input Current

—

REFOUT Voltage

—

REFOUT Current Sink Capability

—

REFOUT Current Source Capability

300

Differential input voltage defined as (VIN+ – VIN-).

Resistance from INn+ to INn- or INn to GND.

@ VDD = 1.8V, ISOURCE ≤ 200µA.

—

260

0.75

1.2

16

.0038

—

60

75

0.4%

75

—

—

1

2

2.0

—

1

1.193

10

—

5.5

V

—

µA

1.5

µA TA = +25°C

3.0

µA

—

Bits

—

%FSR VDD = 2.7V

±0.9 %FSR IN+, IN- = 0V

—

µVrms

—

dB At DC

—

%FS

—

dB VDD = 2.5V to 3.5V

2.5

V Note 1

VDD

V

100

nA

—

pF

—

MΩ Note 2

1.25

V

—

µA

—

V

—

µA

—

µA

© 2002 Microchip Technology Inc.

DS21409B-page 3

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