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C2716 データシートの表示(PDF) - Inchange Semiconductor

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コンポーネント説明
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C2716
Iscsemi
Inchange Semiconductor Iscsemi
C2716 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2716
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.2A
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0
1.0
V
0.1 mA
ICEO
Collector Cutoff Current
VCE= 25V; IB=B 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
0.1 mA
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
20
180
PO
η
www.iscsemi.cn Output Power
Power Efficiency
VCC= 12V;Pin= 1W, f=27MHz
16
18
60
70
W
%
isc Websitewww.iscsemi.cn

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