2SC2774 データシートの表示（PDF） - Inchange Semiconductor
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2SC2774 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2774
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0
200
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
6
V
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
ICBO
Collector cut-off current
VCB=200V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
2.0
V
100 μA
100 μA
hFE
DC current gain
IC=5A ; VCE=4V
50
140
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
300
pF
fT
Transition frequency
固IN电C半H导AN体GE SEMICONDUCTOR hFE classifications
O
Y
50-100
70-140
IC=2A ; VCE=12V
20
MHz
2
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