2SC2773P データシートの表示（PDF） - Quanzhou Jinmei Electronic
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2SC2773P Datasheet PDF : 3 Pages
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=10 A;IB=1 A
ICBO
Collector cut-off current
VCB=200V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=5A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=12V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
hFE classifications
O
P
Y
50-100 70-140 90-180
Product Specification
2SC2773
MIN TYP. MAX UNIT
200
V
6
V
3.0
V
100 μA
100 μA
50
180
20
MHz
250
pF
2
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