2SC3146 データシートの表示（PDF） - Inchange Semiconductor

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2SC3146

Silicon NPN Darlington Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Darlington Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=5mA ;IE=0

VCE(sat)-1 Collector-emitter saturation voltage IC=3.5A ,IB=7mA

VCE(sat)-2 Collector-emitter saturation voltage IC=3.5A ,IB=7mA

ICBO

Collector cut-off current

VCB=40V, IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=3.5A ; VCE=2V

Product Specification

2SC3146

MIN TYP. MAX UNIT

60

V

70

V

1.5

V

2.0

V

0.1

mA

3.0

mA

2000

2

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