2SC3149 データシートの表示（PDF） - Inchange Semiconductor
部品番号
コンポーネント説明
メーカー
2SC3149 Datasheet PDF : 4 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=0.75A; IB=0.15A
VBEsat Base-emitter saturation voltage
IC=0.75A; IB=0.15A
ICBO
Collector cut-off current
VCB=800V ;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=10V
COB
Output capacitance
f=10MHz ; VCB=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
VCC=400V; IC=1A
IB1=0.2A;IB2=-0.4A;
RL=400Ω
hFE-1 classifications
K
L
M
10-20
15-30
20-40
Product Specification
2SC3149
MIN TYP. MAX UNIT
800
V
900
V
7
V
2.0
V
1.5
V
10
μA
10
μA
10
40
8
15
MHz
30
pF
1.0
μs
3.0
μs
0.7
μs
2
Share Link: 