Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞
V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCE(sat) Collector-emitter saturation voltage IC=3A; IB=0.6A
VBE(sat) Base-emitter saturation voltage
IC=3A; IB=0.6A
ICBO
Collector cut-off current
VCB=800V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.4A ; VCE=5V
hFE-2
DC current gain
IC=2A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V, f=1MHz
fT
Transition frequency
IC=0.4A ; VCE=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=4A; IB1=0.8A;IB2=-1.6A
VCC=400V ,RL=100Ω
Product Specification
2SC3156
MIN TYP. MAX UNIT
800
V
900
V
7
V
2.0
V
1.5
V
10
μA
10
μA
10
8
120
pF
15
MHz
1.0
μs
2.5
μs
0.7
μs
2