2SC3164 データシートの表示（PDF） - Inchange Semiconductor
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2SC3164 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3164
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0
400
V
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A
1.0
V
VBEsat Base-emitter saturation voltage
IC=5A ;IB=1A
1.5
V
ICBO
Collector cut-off current
ICEO
Collector cut-off current
At rated voltage
0.1
mA
IEBO
Emitter cut-off current
At rated voltage
0.1
mA
hFE-1
DC current gain
固IN电C半H导AN体GE SEMICONDUCTOR hFE-2
DC current gain
fT
Transition frequency
IC=5A ; VCE=2V
IC=1mA ; VCE=2V
IC=0.6A ; VCE=10V
15
5
20
MHz
2
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