2SC3212A データシートの表示（PDF） - Inchange Semiconductor
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2SC3212A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3212 2SC3212A
DESCRIPTION
·
·With TO-3PFa package
·Low collector saturation voltage
·High VCBO
·High speed switching
APPLICATIONS
·For high speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
固IN电C半H导AN体GE SEMICONDUCTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SC3212
2SC3212A
Open emitter
VCEO
Collector-emitter voltage
Open base
VALUE
800
900
500
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
8
V
IC
Collector current
7
A
ICM
Collector current-peak
15
A
IB
Base current
4
A
PC
Collector power dissipation
TC=25℃
Ta=25℃
100
W
3
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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