2SC3212A データシートの表示（PDF） - Inchange Semiconductor
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2SC3212A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3212 2SC3212A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A;L=25mH
500
V
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A
1.0
V
VBEsat Base-emitter saturation voltage
IC=5A ;IB=1A
1.5
V
ICBO
Collector
cut-off current
2SC3212 VCB=800V; IE=0
2SC3212A VCB=900V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
100 μA
100 μA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
15
hFE-2
DC current gain
IC=5A ; VCE=5V
固IN电C半H导AN体GE SEMICONDUCTOR fT
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
Switching times
ton
Turn-on time
2SC3212
2SC3212A
8
3.5
MHz
1.0
μs
1.2
tstg
Storage time
IC=5A; VCC=200V
IB1=-IB2=1A
2.5
μs
tf
Fall time
2SC3212
2SC3212A
1.0
μs
1.2
2
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