2SC3148 データシートの表示（PDF） - Quanzhou Jinmei Electronic

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2SC3148

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ; IE=0

VCEsat Collector-emitter saturation voltage IC=0.8A; IB=0.16A

VBEsat Base-emitter saturation voltage

IC=0.8A; IB=0.16A

ICBO

Collector cut-off current

VCB=800V ;IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=0.8A ; VCE=5V

Switching times

tr

Rise time

tstg

Storage time

tf

Fall time

VCC≈400V; IC=0.8A

IB1=0.08A;IB2=-0.20A;

RL=50Ω;Duty cycle≤1%

Product Specification

2SC3148

MIN TYP. MAX UNIT

800

V

900

V

0.6

V

1.2

V

100 μA

1

mA

10

1.0

μs

4.0

μs

1.0

μs

2

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