2SC3324-BL(TE85L,F データシートの表示（PDF） - Toshiba

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2SC3324-BL(TE85L,F

Silicon NPN Epitaxial Type (PCT process) Transistor

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Noise figure

Symbol

Test Condition

ICBO

VCB = 120 V, IE = 0

IEBO

VEB = 5 V, IC = 0

hFE

VCE = 6 V, IC = 2 mA

(Note)

VCE (sat) IC = 10 mA, IB = 1 mA

fT

VCE = 6 V, IC = 1 mA

Cob

VCB = 10 V, IE = 0, f = 1 MHz

NF (1)

VCB = 6 V, IC = 0.1 mA, f = 100 Hz,

Rg = 10 kΩ

NF (2)

VCB = 6 V, IC = 0.1 mA, f = 1 kHz,

Rg = 10 kΩ

Note: hFE classification GR (G): 200~400, BL (L): 350~700

( ) marking symbol

2SC3324

Min Typ. Max Unit

⎯

⎯

0.1

μA

⎯

⎯

0.1

μA

200

⎯

700

⎯

⎯

0.3

V

⎯ 100 ⎯ MHz

⎯

3

⎯

pF

⎯

0.5

6

dB

⎯

0.2

3

2

2007-11-01

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