C3307 データシートの表示（PDF） - Inchange Semiconductor
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C3307 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3307
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
800
V
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
900
V
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A
1.0
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IC=5A ;IB=1A
VCB=800V ;IE=0
1.5
V
100 μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1
mA
hFE-1
DC current gain
IC=10mA ; VCE=5V
10
hFE-2
DC current gain
固IN电C半H导AN体GE SEMICONDUCTOR Switching times
tr
Rise time
tstg
Storage time
tf
Fall time
IC=5A ; VCE=5V
IC=1A ; VCC≈400V
IB1=-IB2=0.4A
10
1.0
3.0
1.0
μs
μs
μs
2
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