C3352 データシートの表示（PDF） - Inchange Semiconductor
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C3352 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3352
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0
500
V
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A
1.0
V
VBEsat Base-emitter saturation voltage
IC=1A; IB=0.2A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
0.1 mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1 mA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
15
hFE-2
DC current gain
IC=1A ; VCE=5V
8
fT
Transition frequency
固IN电C半H导AN体GE SEMICONDUCTOR Switching times
ton
Turn-on time
tstg
Storage time
IC=0.2A ; VCE=10V
IC=1A; IB1=-IB2=0.2A
VCC=200V
2.5
MHz
1.0 μs
3.0 μs
tf
Fall time
1.0 μs
2
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