C3353 データシートの表示（PDF） - Inchange Semiconductor

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C3353

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3353

DESCRIPTION

·

·Collector-Emiiter Sustaining Voltage-

: VCEO(SUS)= 500V(Min.)

·Low Collector Saturation Voltage

: VCE(sat)= 1.0V(Max.)@ IC= 3A

·High Speed Switching

APPLICATIONS

·Designed for high speed switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

800

V

VCEO

Collector-Emitter Voltage

500

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current-Continuous

5

A

ICM

Collector Current-Peak

10

A

IBB

Base Current-Continuous

Collector Power Dissipation

@Ta=25℃

PC

Collector Power Dissipation

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

3

A

2

W

40

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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