C3353 データシートの表示（PDF） - Inchange Semiconductor

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C3353

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3353

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; L= 25mH

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.6A

VBE(sat) Base-Emitter Saturation Voltage

IC= 3A; IB=B 0.6A

ICBO

Collector Cutoff Current

VCB= 800V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 0.1A; VCE= 5V

hFE-2

DC Current Gain

IC= 3A; VCE= 5V

fT

Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V

Switching Times; Resistive Load

ton

Turn-on Time

ts

Storage Time

tf

Fall Time

IC= 3A; IB1= -IB2= 0.6A;

VCC= 200V

MIN TYP. MAX UNIT

500

V

1.0

V

1.5

V

0.1 mA

0.1 mA

15

8

3

MHz

1.0 μs

3.0 μs

1.0 μs

isc Website：www.iscsemi.cn

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