2SC3371 データシートの表示（PDF） - Inchange Semiconductor
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2SC3371 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3371
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 25mH
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB=B 1.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB=B 1.6A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
hFE-2
DC Current Gain
IC= 8A; VCE= 5V
Switching Times; Resistive Load
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 8A; IB1= -IB2= 1.6A;
VCC= 200V
MIN TYP. MAX UNIT
500
V
1.0
V
1.5
V
0.1 mA
0.1 mA
15
10
1.0 μs
3.0 μs
1.0 μs
isc Website：www.iscsemi.cn
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