C3306 データシートの表示（PDF） - SavantIC Semiconductor

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C3306

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3306

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ,IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ,IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ,IC=0

VCEsat

VBEsat

ICBO

IEBO

Collector-emitter saturation voltage IC=5A; IB=0.5A

Base-emitter saturation voltage

IC=5A; IB=0.5A

Collector cut-off current

VCB=400V; IE=0

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=5A ; VCE=5V

Switching times

tr

Rise time

tstg

Storage time

tf

Fall time

VCC=200V; IC=5.0A

IB1=-IB2=0.5A;RL=40 <

MIN TYP. MAX UNIT

400

V

500

V

7

V

1.5

V

2.0

V

100

µA

1.0

mA

10

1.0

µs

2.5

µs

1.0

µs

2

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