C3318 データシートの表示（PDF） - SavantIC Semiconductor

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C3318

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3318

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=5A; IB=1A

VBEsat

Base-emitter saturation voltage

IC=5A ;IB=1A

ICBO

Collector cut-off current

VCB=500V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=5A ; VCE=5V

Switching times resistive load

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=5.0A IB1=1A

IB2=-2A RL=30ohm

PW=20µs

Duty=<2%

MIN TYP. MAX UNIT

400

V

500

V

7

V

1.0

V

1.5

V

1.0

mA

1.0

mA

10

0.5

µs

1.5

µs

0.15

µs

2

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