2SC3458 データシートの表示（PDF） - Inchange Semiconductor
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2SC3458 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3458
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞
800
V
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
1100
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
7
V
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A
2.0
V
VBEsat Base-emitter saturation voltage
IC=1.5A; IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.2A ; VCE=5V
10
40
hFE-2
DC current gain
固IN电C半H导AN体GE SEMICONDUCTOR Cob
Output capacitance
fT
Transition frequency
Switching times
ton
Turn-on time
IC=1A ; VCE=5V
IE=0 ; VCB=10V;f=1MHz
IC=0.2A ; VCE=10V
IC=2A;RL=200Ω
8
60
15
pF
MHz
0.5
μs
tstg
Storage time
IB1=0.4A; IB2=-0.8A
3.0
μs
VCC=400V
tf
Fall time
0.3
μs
hFE-1 Classifications
K
L
M
10-20
15-30
20-40
2
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