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C3507 データシートの表示(PDF) - Panasonic Corporation
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コンポーネント説明
メーカー
C3507
Silicon NPN triple diffusion planar type Power Transistors
Panasonic Corporation
C3507 Datasheet PDF : 3 Pages
1
2
3
Power Transistors
100
(1)
80
60
P
C
— Ta
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=3W)
40
20
(2)
(3)
0
0 25 50 75 100 125 150
Ambient temperature Ta (˚C)
V
BE(sat)
— I
C
100
I
C
/I
B
=5
30
10
3
1
T
C
=–25˚C
0.3 25˚C
100˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I
C
(A)
t
on
, t
stg
, t
f
— I
C
10
3
t
stg
1
0.3
0.1
0.03
0.01
0
t
on
t
f
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=5
(2I
B1
=–I
B2
)
V
CC
=250V
T
C
=25˚C
12345678
Collector current I
C
(A)
I
C
— V
CE
10
T
C
=25˚C
8
6
I
B
=800mA
500mA
4
400mA
300mA
200mA
2
100mA
20mA
0
0 2 4 6 8 10 12
Collector to emitter voltage V
CE
(V)
2SC3507
V
CE(sat)
— I
C
100
I
C
/I
B
=5
30
10
3
T
C
=100˚C
1
25˚C
0.3
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I
C
(A)
1000
300
100
h
FE
— I
C
V
CE
=5V
30 T
C
=100˚C
10
–25˚C
3
1
25˚C
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current I
C
(A)
1000
300
100
f
T
— I
C
V
CE
=5V
f=1MHz
T
C
=25˚C
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current I
C
(A)
Area of safe operation (ASO)
100
30
10
I
CP
I
C
3
1
Non repetitive pulse
T
C
=25˚C
10ms
DC
t=1ms
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage V
CE
(V)
2
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