2SC380TM データシートの表示（PDF） - Toshiba

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2SC380TM

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)

Toshiba 

y Parameters (typ.)

(1) (common emitter f = 455 kHz, Ta = 25°C)

Characteristics

Symbol

2SC380TM-R

Collector-emitter voltage

Emitter current

Input conductance

Input capacitance

Output conductance

Output capacitance

Forward transfer admittance

Phase angle of forward transfer

admittance

Reverse transfer admittance

Phase angle of reverse transfer

admittance

VCE

IE

gie

Cie

goe

Coe

ïyfeï

qfe

ïyreï

qre

6

-1

0.58

53

1.9

2.6

38

-0.79

5.7

-90

(2) (common emitter f = 10.7 MHz, Ta = 25°C)

Characteristics

Symbol

2SC380TM-R

Collector-emitter voltage

VCE

6

Emitter current

IE

-1

Input conductance

gie

1.04

Input capacitance

Cie

49

Output conductance

goe

10

Output capacitance

Forward transfer admittance

Coe

2.7

ïyfeï

37

Phase angle of forward transfer

admittance

qfe

-9.6

Reverse transfer admittance

ïyreï

120

Phase angle of reverse transfer

admittance

qre

-90

2SC380TM-O

6

-1

0.41

46

2.7

2.8

38

-0.83

5.7

-90

2SC380TM-O

6

-1

0.85

43

15

2.9

37

-10.4

120

-90

2SC380TM

2SC380TM-Y

Unit

6

V

-1

mA

0.26

mS

38

pF

4.8

mS

3.6

pF

38

mS

-0.92

°

6.2

mS

-90

°

2SC380TM-Y

Unit

6

V

-1

mA

0.65

mS

36

pF

28

mS

3.6

pF

37

mS

-11.5

°

140

mS

-90

°

Figure 1 Gpe Test Circuit

2

2003-03-27

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