2SC3549 データシートの表示（PDF） - Inchange Semiconductor

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2SC3549

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

2SC3549

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0

800

V

V(BR)CBO Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

900

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

10

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB=B 0.2A

VBE(sat) Base-Emitter Saturation Voltage

IC= 1A; IB=B 0.2A

ICBO

Collector Cutoff Current

VCB= 900V; IE= 0

www.iscsemi.cn IEBO

Emitter Cutoff Current

hFE

DC Current Gain

Switching times

ton

Turn-on Time

tstg

Storage Time

VEB= 10V; IC= 0

IC= 1A ; VCE= 5V

10

IC= 2A , IB1= 0.4A; IB2= -0.8A

RL=150Ω;

PW= 20μs; Duty≤2%

tf

Fall Time

1.0

V

1.5

V

1.0 mA

1.0 mA

1.0 μs

4.0 μs

0.8 μs

isc Website：www.iscsemi.cn

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