2SC3657 データシートの表示（PDF） - Inchange Semiconductor

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2SC3657

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3657

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0

800

V

V(BR)CBO Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

900

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.4A

1.0

V

VBE(sat) Base-Emitter Saturation Voltage

ICBO

Collector Cutoff Current

IC= 2A; IB=B 0.4A

VCB= 800V; IE= 0

1.5

V

100 μA

www.iscsemi.cn IEBO

Emitter Cutoff Current

hFE

DC Current Gain

Switching times

tr

Rise Time

tstg

Storage Time

VEB= 7V; IC= 0

IC= 1A; VCE= 5V

10

IC= 1A; IB1= -IB2= -0.4A;

RL= 400Ω; VCC≈ 400V

tf

Fall Time

1

mA

1.0 μs

2.5 μs

1.0 μs

‹ hFE-1 Classifications

K

L

M

10-20 15-30 20-40

isc Website：www.iscsemi.cn

2

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