C3690 データシートの表示（PDF） - Inchange Semiconductor
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C3690 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3690
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 2A; IB=B 0.2A, L= 1mH
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.1A
VCE(sat) -2 Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.15A
VBE(sat) -1 Base-Emitter Saturation Voltage
IC= 2A; IB=B 0.1A
VBE(sat) -2 Base-Emitter Saturation Voltage
IC= 3A; IB=B 0.15A
ICBO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB= 60V; IE= 0
VCE= 60V; VBE= -1.5V
Ta=125℃
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.3A ; VCE= 2V
hFE-2
DC Current Gain
IC= 0.6A ; VCE= 2V
hFE-3
DC Current Gain
IC= 2A ; VCE= 2V
MIN TYP. MAX UNIT
60
V
0.3
V
0.5
V
1.2
V
1.5
V
10 μA
10 μA
1.0 mA
10 μA
100
100 200 400
60
hFE-2 classifications
M
L
K
100-200 150-300 200-400
isc Website：www.iscsemi.cn
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