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2SC4020 データシートの表示(PDF) - Inchange Semiconductor

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2SC4020
Iscsemi
Inchange Semiconductor Iscsemi
2SC4020 Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=0.7A; IB=0.14A
VBEsat Base-emitter saturation voltage
IC=0.7A; IB=0.14A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
VCB=800V ;IE=0
VEB=7V; IC=0
IC=0.7A ; VCE=4V
fT
Transition frequency
IE=-0.3A ; VCE=12V
COB
Output capacitance
f=1MHz ; VCB=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
VCC=250V; IC=0.7A
IB1=0.1A;IB2=-0.35A;
RL=357Ω
Product Specification
2SC4020
MIN TYP. MAX UNIT
800
V
0.5
V
1.2
V
100 μA
100 μA
10
30
6
MHz
40
pF
1.0 μs
5.0 μs
1.0 μs
2

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