2SC4212 データシートの表示（PDF） - Panasonic Corporation

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2SC4212

Silicon NPN triple diffusion planar type Power Transistors

Panasonic Corporation 

2SC4212

PC  Ta

6

(1)With a 100×100×2mm

Al heat sink

(2)Without heat sink

5

4

3

(1)

2

1

(2)

0

0

40 80 120 160 200

Ambient temperature Ta (°C)

IC  VCE

200

TC=25˚C

160

IB=2.0mA 1.8mA

1.6mA

120

1.4mA

1.2mA

1.0mA

0.8mA

0.6mA

80

0.4mA

40

0.2mA

0

0

4

8

12 16 20

Collector-emitter voltage VCE (V)

IC  VBE

240

25˚C

VCE=10V

TC=75˚C

–25˚C

200

160

120

80

40

0

0 0.4 0.8 1.2 1.6 2.0

Base-emitter voltage VBE (V)

VCE(sat)  IC

10

1 000

IC/IB=10

1

100

25˚C

TC=100˚C

–25˚C

0.1

10

hFE  IC

VCE=10V

TC=100˚C

25˚C

–25˚C

0.01

1

10

100

Collector current IC (mA)

1

1

10

100

Collector current IC (mA)

fT  IE

200

VCB=30V

f=200MHz

TC=25˚C

160

120

80

40

0

−1

−10

−100

−1 000

Emitter current IE (mA)

Cob  VCB

20

IE=0

f=1MHz

TC=25˚C

16

12

8

4

Safe operation area

10

Single pulse

TC=25˚C

1

ICP

IC

0.1

0.01

t=10ms

t=1s

DC

0

1

10

100

Collector-base voltage VCB (V)

0.001

1

10

100

1 000

Collector-emitter voltage VCE (V)

2

SJD00127BED

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