DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SC4430 データシートの表示(PDF) - SANYO -> Panasonic

部品番号
コンポーネント説明
メーカー
2SC4430 Datasheet PDF : 4 Pages
1 2 3 4
2SC4430
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
min
typ
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
VCE=5V, IC=0.8A
VCE=5V, IC=4A
IC=6A, IB=1.2A
IC=6A, IB=1.2A
VCE=10V, IC=0.8A
VCB=10V, f=1MHz
10
8
15
215
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
Storage Time
Fall Time
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEX(sus)
ton
tstg
tf
IC=1mA, IE=0
IC=5mA, RBE=
IE=1mA, IC=0
IC=6A, IB1=1.2A, IB2=1.2A, L=500µH, Clamped
IC=8A, IB1=1.6A, IB2=3.2A, RL=50Ω, VCC=400V
IC=8A, IB1=1.6A, IB2=3.2A, RL=50Ω, VCC=400V
IC=8A, IB1=1.6A, IB2=3.2A, RL=50Ω, VCC=400V
1100
800
7
800
* : The hFE1 of the 2SC4430 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
Rank
K
L
M
hFE
10 to 20 15 to 30 20 to 40
max
40
2.0
1.5
0.5
3.0
0.3
Unit
V
V
MHz
pF
V
V
V
V
µs
µs
µs
Switching Time Test Circuit
IB1
IB2
INPUT
PW=20µs
RB
D.C.1%
VR
50
+
100µF
OUTPUT
RL
+
470µF
VBE= --5V
VCC=400V
IC -- VCE
10
1.6A
1.4A
9
1.2A
8
1.0A
7
800mA
6
600mA
5
400mA
4
200mA
3
2
100mA
1
50mA
0
IB=0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE V ITR06884
hFE -- IC
2
VCE=5V
100
7
5
Ta=120°C
3
2
25°C
10
--40°C
7
5
3
2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2
Collector Current, IC A
ITR06886
13
12 VCE=5V
IC -- VBE
11
10
9
8
7
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE V ITR06885
7
5 IC / IB=5
VCE(sat) -- IC
3
2
1.0
7
5
3
2
0.1
7
5
3
23
120°C
5 7 0.1 2 3 5 7 1.0 2 3
Collector Current, IC A
5 7 10 2
ITR06887
No.2853–2/4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]