2SC4538 データシートの表示（PDF） - Inchange Semiconductor
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2SC4538 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4538
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
900
V
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
800
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
10
V
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A
1.0
V
VBEsat Base-emitter saturation voltage
IC=2A; IB=0.4A
1.5
V
ICBO
Collector cut-off current
VCB=900V; IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=10V; IC=0
1.0
mA
hFE
DC current gain
固IN电C半H导AN体GE SEMICONDUTOR Switching times
ton
Turn-on time
tstg
Storage time
IC=2A ; VCE=5V
10
1.0
IC=3A;RL=100Ω
IB1=0.6A; IB2=-1.2A
4.0
Pw = 20μs; Duty≤2%
μs
μs
tf
Fall time
0.8
μs
2
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