C4570 データシートの表示（PDF） - Inchange Semiconductor
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C4570 Datasheet PDF : 9 Pages
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4570
DESCRIPTION
·High Current-Gain—Bandwidth Product
fT= 5.5 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz
·Low COB
0.7pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz
APPLICATIONS
·Designed for use in UHF oscillator and mixer.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
12
V
3.0
V
30
mA
0.12
W
125
℃
-55~125
℃
isc Website：www.iscsemi.cn
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