2SC4421 データシートの表示（PDF） - Inchange Semiconductor
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2SC4421 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4421
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.5
V
1.5
V
100 μA
100 μA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
10
hFE-2
DC Current Gain
IC= 1.5A; VCE= 5V
6
fT
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 10V; f= 1MHz
5
MHz
Switching Times
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 1.5A; IB1= 0.3A; IB2= -0.6A;
VCC= 150V
0.5 μs
2.0 μs
0.1 μs
isc Website：www.iscsemi.cn
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