2SC4430 データシートの表示（PDF） - Inchange Semiconductor
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2SC4430 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4430
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE=∞
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat
VBEsat
ICBO
Collector-emitter saturation voltage IC=6A;IB=1.2A
Base-emitter saturation voltage
IC=6A;IB=1.2A
Collector cut-off current
VCB=800V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.8A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
fT
Transition frequency
COB
Output capacitance
Switching times
IC=0.8A ; VCE=10V
VCB=10V;f=1MHz
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=8A;RL=50Ω
IB1=1.6A;- IB2=3.2A
VCC=400V
hFE-1 classifications
K
L
M
10-20 15-30 20-40
MIN TYP. MAX UNIT
1100
V
800
V
7
V
2.0
V
1.5
V
10
μA
10
μA
10
40
8
15
MHz
215
pF
0.5
μs
3.0
μs
0.3
μs
2
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